Semiconductor device and method of manufacturing the...

Details Semiconductor device and method of manufacturing the... Semiconductor device and method of manufacturing the...

2008-12-10

2010-02-16

Ha, Nguyen T (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S306100, C361S306300, C361S301400, C361S308300, C361S313000, C257S195000, C257S196000, C257S500000, C257S502000

Reexamination Certificate

active

07663861

ABSTRACT:
An MIM capacitance element (capacitance lower electrode, capacitance insulation film and capacitance upper electrode) is provided on a first insulation film on a semiconductor substrate. An interlayer insulation film is provided so as to cover the MIM capacitance element and flattened. The interlayer insulation film is provided with a first connection plug connected to the capacitance upper electrode, a first wiring layer, and a second wiring layer. A second insulation film is provided on the interlayer insulation film. The second insulation film is provided with first and second openings. A wiring pull-out portion which connects the first connection plug and the second wiring layer to each other is provided on the second insulation film.

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patent: 2006-310894 (2006-11-01), None

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