Semiconductor device and method of manufacturing the...

Details Semiconductor device and method of manufacturing the... Semiconductor device and method of manufacturing the...

2007-05-25

2009-10-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Direct application of electrical current

To alter conductivity of fuse or antifuse element

C257S355000, C257S357000, C257S360000, C257S173000, C257SE23149, C438S281000, C438S215000

Reexamination Certificate

active

07605059

ABSTRACT:
A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed through a gate insulating film on the semiconductor substrate, between the source region and the drain region; an impurity region of the first conductive type formed in the semiconductor substrate; an impurity region of a second conductive type to be opposite to the first conductive type formed in the semiconductor substrate; and a wiring provided to connect each of the impurity region of the first conductive type and the impurity region of the second conductive type to the gate electrode.

REFERENCES:
patent: 6323076 (2001-11-01), Wilford
patent: 2002/0061630 (2002-05-01), Lee et al.
patent: 2003/0038890 (2003-02-01), Yamada
patent: 2006/0006470 (2006-01-01), Harada
patent: 2006-24601 (2006-01-01), None

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