Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-08-31
1996-03-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, 257765, 257771, H01L 2348, H01L 2352, H01L 2940, H01L 2328
Patent
active
054989094
ABSTRACT:
The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.
REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4910580 (1990-03-01), Kuecher et al.
patent: 4980752 (1990-12-01), Jones, Jr.
Harada et al, "Ohmic Contact in ECRCVD-TiN/Si Structure", 1993 International Conf. on Solid State Devices and Mat., Makuhari, 1993, pp. 174-176.
Nikkei Microdevices, May 1990, pp. 93-104.
A Newly Developed Mode For Stress Induced Slit-Like Voiding; H. Kaneko, et al. pp. 194-199. (1990).
Technical Digest of IEDM '89, "Single Crystal Aluminum Lines With Excellent Endurance Against Stress Induced Failure"; M. Hasunuma et al; Dec. 3, 1989.
Thin Solid Films, 75(1981) 253-259, "Effect of Texture and Grain Structure on Electromigration in Al-0.5%Cu Thin Films"; S. Vaidya et al; 1981.
Hasunuma Masahiko
Kaneko Hisashi
Kawanoue Takashi
Kohanawa Yoshiko
Komatsu Shuichi
Clark S. V.
Crane Sara W.
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device and method of manufacturing such semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing such semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing such semiconduc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2102667