Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1996-01-22

1998-01-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

257109, 257165, 257171, 257169, H01W 2974, H01L 31111

Patent

active

057104425

ABSTRACT:
A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating region. Since the blocking-voltage and the current-carrying capacity can be adjusted independently from each other, the blocking voltage and the current-carrying capacity can be both improved.

REFERENCES:
patent: 3564357 (1971-02-01), Valcik
patent: 4236169 (1980-11-01), Nakashima et al.
patent: 4292646 (1981-09-01), Assour et al.

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