Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2010-12-21

2011-12-06

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S241000

Reexamination Certificate

active

08072074

ABSTRACT:
A technique for enhancing the performance of a memory- and logic-equipped semiconductor device is provided. The semiconductor device comprises a semiconductor substrate (1), an insulating layer (19) on the semiconductor substrate (1), a plurality of contact plugs (16, 66) in the insulating layer (19), and an insulating layer (30) where capacitors (82), a plurality of contact plugs (25, 75), barrier metal layers (27, 87) and copper interconnections (29, 88) are formed. Source/drain regions (9) in the upper surface of the semiconductor substrate (1) are electrically connected to the copper interconnections (29). One of adjacent source/drain regions (59) in the upper surface of the semiconductor substrate (1) is electrically connected to the copper interconnection (88), while the other is electrically connected to the capacitor (82).

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