Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-09-15
2011-12-06
Mitchell, James (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C438S672000, C438S675000
Reexamination Certificate
active
08072073
ABSTRACT:
A highly reliable semiconductor device in which connection reliability is assured at very small vias comprises: a semiconductor substrate; a first wiring structure placed on the semiconductor substrate and having one or more first wiring layers, one or more insulating layers and a first via; a second wiring structure placed on the first wiring structure and having one or more second wiring layers, one or more second insulating layers, a second via and a third via; and an external terminal provided on the second wiring structure. The second via, which is connected to the second wiring layer of the second wiring structure and to the external terminal, has a connection interface disposed at an end of the via that is on the side of the external terminal.
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Chinese Official Action—200810160807.6—Feb. 23, 2011.
Kawano Masaya
Kikuchi Katsumi
Soejima Kouji
Yamamichi Shintaro
Mitchell James
NEC Corporation
Renesas Electronics Corporation
Young & Thompson
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