Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-10-09
2007-10-09
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S739000, C257SE23114, C438S608000, C438S609000
Reexamination Certificate
active
10842412
ABSTRACT:
According to this invention, a semiconductor device has an upper surface on which an external connection electrode is formed and a lower surface which opposes the upper surface and is in a mirror surface state. A roughened region roughened by laser marking is formed at part of the lower surface. The roughened region includes a product information mark of the semiconductor device itself. The product information mark is printed by laser marking. The number, size, shape, and layout position of the roughened regions are decided to make it possible to, when the lower surface is irradiated with light, read the product information from the difference in light reflectance between the roughened region and mirror-finished region.
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English Translation of Korean Office Action issued Dec. 20, 2005 in connection with Korean Application No. 10-2004-003835.
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Casio Micronics Co., Ltd
Nguyen Joseph
Ohlandt Greeley Ruggiero & Perle
Parker Kenneth
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