Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2006-05-16

2006-05-16

Pham, Hoa (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With heat sink embedded in encapsulant

C257S706000, C257S712000

Reexamination Certificate

active

07045907

ABSTRACT:
A semiconductor device includes a metal block, a semiconductor element on the metal block, an insulation layer on the metal block opposite the semiconductor element, a bonding material between the semiconductor element and the metal block, and a resin package configured to seal the semiconductor element and the metal block while uncovering the insulating layer. The bonding material has a higher heat conduction than the insulation layer, and the insulation layer has a higher heat conduction than the resin package.

REFERENCES:
patent: 5057906 (1991-10-01), Ishigami
patent: 5293301 (1994-03-01), Tanaka et al.
patent: 5317194 (1994-05-01), Sako
patent: 5440169 (1995-08-01), Tomita et al.
patent: 5598034 (1997-01-01), Wakefield
patent: 5703399 (1997-12-01), Majumdar et al.
patent: 5767573 (1998-06-01), Noda et al.
patent: 5959349 (1999-09-01), Wensel
patent: 5986336 (1999-11-01), Tomita et al.
patent: 6297959 (2001-10-01), Ueno et al.
patent: 44 00 341 (1994-07-01), None
patent: 196 25 240 (1997-04-01), None
patent: 197 00 056 (1997-09-01), None
patent: 0 777 272 (1997-06-01), None
patent: 10-93015 (1988-04-01), None
patent: 8-78461 (1996-03-01), None
patent: 9-186269 (1997-07-01), None
patent: 10-135380 (1998-05-01), None
patent: 11-17071 (1999-01-01), None
patent: 11-243166 (1999-07-01), None
patent: 0065249 (1993-04-01), None
G Majumdar, et al., “Novel Intelligent Power Modules for Low-Power Inverters”, 1998 IEEE Power Electronics Specialists Conference, vol. 2, pp. 1173-1179.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3644118