Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1991-02-08

1993-09-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437974, 148DIG135, 156645, H01L 21302, H01L 21463

Patent

active

052428621

ABSTRACT:
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.

REFERENCES:
patent: 4859629 (1989-08-01), Reardon et al.
patent: 4879250 (1989-11-01), Chan
patent: 4927784 (1990-05-01), Kazior et al.
Krishna Shenai, Optimally Scaled Low-Voltage Vertical Power Mosfet's for High-Frequency Power Conversion IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr. 1990, pp. 1141-1153.
Krishna Shenai et al, A 50-V, 0.7-M CM, Vertical-Power DMPSFET IEEE Electron Device Letters, vol. 10, No. 3, Mar. 1989, pp. 101-103.

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