Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2005-06-28

2005-06-28

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S584000, C438S758000, C257S428000, C257S431000

Reexamination Certificate

active

06911352

ABSTRACT:
A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a method of manufacturing a semiconductor device including the steps of forming a first semiconductor layer on a substrate, forming a first transparent electroconductive layer on the first semiconductor layer, and forming a second semiconductor layer on the first transparent electroconductive layer, the method further including executing passivation treatment on defects in the first semiconductor layer before the formation of the second semiconductor layer.

REFERENCES:
patent: 5021100 (1991-06-01), Ishihara et al.
patent: 6132585 (2000-10-01), Midorikawa et al.
patent: 6261862 (2001-07-01), Hori et al.
patent: 6291761 (2001-09-01), Takada et al.
patent: 63-77167 (1988-04-01), None
patent: 2-237172 (1990-09-01), None
patent: 6-21493 (1994-01-01), None

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