Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-05-11
1996-01-16
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 30, 257 38, 257 46, 257104, 257136, 257498, 257458, 257523, 437 40, 437 81, 437105, 437107, 437126, 437228, H01L 2906, H01L 21265
Patent
active
054850177
ABSTRACT:
A semiconductor device has an n.sup.+ source region, a first n.sup.- channel region, a barrier layer, a second n.sup.- channel region, a pair of n.sup.+ drain regions, an insulating film, and a pair of metal electrodes over the respective n.sup.+ drain regions, all successively disposed on an upper surface of an n.sup.+ crystal substrate. The drain regions and the metal electrodes jointly provide a storage electric capacitance. A source electrode is disposed on the lower surface of the n.sup.+ crystal substrate. Bit information can be written and read at a high speed by tunneling through the barrier layer. According to a method of manufacturing the above semiconductor device, the n.sup.+ source region, the first n.sup.- channel region, the barrier layer, the second n.sup.- channel region, the n.sup.+ drain regions, the insulating film, and the metal electrodes are successively deposited on the n.sup.+ crystal substrate in a growing apparatus. The metal electrodes and the source electrode are formed by depositing a metal and a low-resistance semiconductor selectively or both in one location within the growing apparatus.
REFERENCES:
patent: 4841350 (1989-06-01), Nishizawa
patent: 5216262 (1993-06-01), Tsu
Nishizawa et al., "High Speed and High Density Static Induction Transistor Memory" (Oct. 1978), IEEE Journal of Solid-State Circuits, vol. SC-13, No. 5, pp. 622-634.
Wojciechowicz Edward
Zaidan Hojin Handotai Kenkyu Shinkokai
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