Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2011-01-18

2011-01-18

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S330000, C257S369000, C257S296000

Reexamination Certificate

active

07872282

ABSTRACT:
A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field limiting rings, and conductive field plates each in contact with a surface of each of the first and the second field limiting rings. Each of the field plates project over a surface of each of the insulation films between the first field limiting rings and the second field limiting rings.

REFERENCES:
patent: 5148255 (1992-09-01), Nakazato et al.
patent: 5828101 (1998-10-01), Endo
patent: 2004/0256691 (2004-12-01), Nemoto et al.
patent: 2008/0303057 (2008-12-01), Iwamuro
patent: 2001-185727 (2001-07-01), None
patent: 2002-319676 (2002-10-01), None
patent: 2005-101254 (2005-04-01), None
patent: 2005-252212 (2005-09-01), None

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