Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-08-17
1998-12-08
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257331, 257334, 257263, 257265, H01L 2974, H01L 2980
Patent
active
058474170
ABSTRACT:
A normally-off semiconductor device with gate regions formed in a high-quality base is manufactured by forming a P.sup.+ layer in a lower surface of an N.sup.- substrate, selectively forming P.sup.+ gate regions in an upper surface of the N.sup.- substrate, forming intergate P.sup.+ regions in the upper surface of the N.sup.- substrate between the P.sup.+ gate regions, forming an N.sup.+ layer in an upper surface of an N.sup.- substrate, joining the N.sup.- substrate and the N.sup.- substrate to each other by heating them at about 800.degree. C. in a hydrogen atmosphere while the upper surface of the N.sup.- substrate and a lower surface of the N.sup.- substrate are being held against each other, and forming an anode electrode and a cathode electrode.
REFERENCES:
patent: 4198645 (1980-04-01), Nishizawa
Patent Abstract of Japan; Publication No. 62 62558 A;Date: 03/19/87; Ogura Tsuneo et al.
Monin Donald
NGK Insulators Ltd.
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