Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2011-06-21
2011-06-21
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S763000, C257SE23031, C257SE21510, C438S113000
Reexamination Certificate
active
07964939
ABSTRACT:
A semiconductor device comprises: a semiconductor chip; a first frame; a solder layer which bonds the solder bonding metal layer of the semiconductor chip and the first frame; and a second frame bonded to the rear face of the semiconductor chip. The semiconductor chip includes: a semiconductor substrate; a first metal layer provided on a major surface of the semiconductor substrate and forming a Schottky junction with the semiconductor substrate; a second metal layer provided on the first metal layer and primarily composed of aluminum; a third metal layer provided on the second metal layer and primarily composed of molybdenum or titanium; and a solder bonding metal layer provided on the third metal layer and including at least a fourth metal layer which is primarily composed of nickel, iron or cobalt.
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Fukui Tetsuya
Watanabe Mitsuru
Kabushiki Kaisha Toshiba
Nguyen Thinh T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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