Semiconductor device and method of manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S698000, C257S737000, C257S738000, C257S774000, C257SE23011, C257SE23021

Reexamination Certificate

active

07977771

ABSTRACT:
The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening; and a pad formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.

REFERENCES:
patent: 7271499 (2007-09-01), Hashimoto
patent: 7888177 (2011-02-01), Hashimoto
patent: 2002/0048916 (2002-04-01), Yanagida
patent: 2003/0011078 (2003-01-01), Fukao et al.
patent: 2007/0007664 (2007-01-01), Lee et al.
patent: 2008/0296717 (2008-12-01), Beroz et al.
patent: 2009/0181521 (2009-07-01), Hashimoto
patent: 2009/0218687 (2009-09-01), Chou et al.
patent: 2009/0229872 (2009-09-01), Takaike
patent: 2009/0289362 (2009-11-01), Rhyner et al.
patent: 2011/0021005 (2011-01-01), Inada et al.
patent: 2004-207268 (2004-07-01), None

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