Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-02-15
2005-02-15
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S701000
Reexamination Certificate
active
06856023
ABSTRACT:
The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.
REFERENCES:
patent: 4601916 (1986-07-01), Arachtingi
patent: 5421083 (1995-06-01), Suppelsa et al.
patent: 6089442 (2000-07-01), Ouchi et al.
patent: 6159754 (2000-12-01), Li et al.
patent: 6180261 (2001-01-01), Inoue et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6320691 (2001-11-01), Ouchi et al.
patent: 6590291 (2003-07-01), Akagawa
patent: 6605551 (2003-08-01), Wermer et al.
patent: 6720661 (2004-04-01), Hanaoka et al.
patent: 20020030245 (2002-03-01), Hanaoka et al.
patent: 1327263 (2001-12-01), None
patent: 2 767 223 (1999-02-01), None
patent: 4-10649 (1992-01-01), None
patent: 9-92675 (1997-04-01), None
patent: WO 9908318 (1999-02-01), None
Morimoto Hiroyuki
Muta Tadayoshi
Saito Riichi
Suto Tadanori
Tachikawa Jin
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