Semiconductor device and method of manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S701000

Reexamination Certificate

active

06856023

ABSTRACT:
The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.

REFERENCES:
patent: 4601916 (1986-07-01), Arachtingi
patent: 5421083 (1995-06-01), Suppelsa et al.
patent: 6089442 (2000-07-01), Ouchi et al.
patent: 6159754 (2000-12-01), Li et al.
patent: 6180261 (2001-01-01), Inoue et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6320691 (2001-11-01), Ouchi et al.
patent: 6590291 (2003-07-01), Akagawa
patent: 6605551 (2003-08-01), Wermer et al.
patent: 6720661 (2004-04-01), Hanaoka et al.
patent: 20020030245 (2002-03-01), Hanaoka et al.
patent: 1327263 (2001-12-01), None
patent: 2 767 223 (1999-02-01), None
patent: 4-10649 (1992-01-01), None
patent: 9-92675 (1997-04-01), None
patent: WO 9908318 (1999-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3460057

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.