Semiconductor device and method of manufacture thereof

Details Semiconductor device and method of manufacture thereof Semiconductor device and method of manufacture thereof

2006-01-24

2006-01-24

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

C438S658000, C438S688000, C257S758000, C257S773000, C257S774000

Reexamination Certificate

active

06989330

ABSTRACT:
In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

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