Semiconductor device and method of manufacture thereof

Details Semiconductor device and method of manufacture thereof Semiconductor device and method of manufacture thereof

2005-02-15

2005-02-15

Gurley, Lynne A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S751000, C257S763000, C257S764000, C257S765000, C257S771000

Reexamination Certificate

active

06856018

ABSTRACT:
In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

REFERENCES:
patent: 5614439 (1997-03-01), Murooka et al.
patent: 5990011 (1999-11-01), McTeer
patent: 6281584 (2001-08-01), Ngo et al.
patent: 20020109235 (2002-08-01), Leiphart
patent: 10-098102 (1998-04-01), None
patent: 11-345876 (1999-12-01), None
patent: 2000-208622 (2000-07-01), None
patent: 2000-286262 (2000-10-01), None
patent: 2001-144180 (2001-05-01), None
patent: 2001-210647 (2001-08-01), None
patent: 2001-284448 (2001-10-01), None

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