Semiconductor device and method of manufacture thereof

Details Semiconductor device and method of manufacture thereof Semiconductor device and method of manufacture thereof

2005-09-13

2005-09-13

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

Reexamination Certificate

active

06943115

ABSTRACT:
A method is provided for manufacturing a semiconductor device having a multilayer wiring structure in which at least one insulating film is formed with a set of conducting portions which are electrically connected to each other to have a surface area of no less than 500 μm2and which include a wiring having a width of no more than 1.0 μm. The method includes a polishing step for flattening the conducting portions together with the insulating film by chemical mechanical polishing, a chemical cleaning step for cleaning the flattened surface of the insulating film with a cleaning liquid, and a rising step for removing the cleaning liquid using a rinsing liquid. The rinsing step is performed using water with a dissolved oxygen concentration decreased to no more than 6 ppm by weight as the rinsing liquid.

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