Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2005-09-06
2005-09-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S698000, C257S700000
Reexamination Certificate
active
06940160
ABSTRACT:
A semiconductor device comprising: a semiconductor element (10) having a plurality of electrodes (12); an interconnect pattern (20) electrically connected to the electrodes (12); a plurality of laminated insulating layers (41, 42and43); and a plurality of external terminals (30) electrically connected to the interconnect pattern (20). A plurality of holes (44, 46, and48) are respectively formed in the insulating layers (41, 42, and43) to form an opening portion (40) communicating from the hole (48) in the highest insulating layer (43) to the hole (44) in the lowest insulating layer (41). An external terminal (30) is provided within the opening portion (40), and the second hole (46) formed in the higher positioned second insulating layer (42) is larger than the first hole (44) formed in the lower positioned first insulating layer (41).
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Hanaoka Terunao
Ito Haruki
Nozawa Kazuhiko
Andújar Leonardo
Flynn Nathan J.
Seiko Epson Corporation
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