Semiconductor device and method of manufacture thereof

Details Semiconductor device and method of manufacture thereof Semiconductor device and method of manufacture thereof

1994-09-21

1995-05-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257296, 257506, 257524, 257619, H01L 2968, H01L 2712, H01L 2704, H01L 2906

Patent

active

054204585

ABSTRACT:
A semiconductor device having a high-speed device and a uniform plane bearing is provided. Device formation regions (51, 52, and 55) are formed on upper surfaces of the silicon substrate (21 and 22), and device isolation regions (9) acting as insulating layer are formed therebetween. The silicon substrate is etched to shape a bottom recessed part (8). The bottom recessed part (8) is formed in such a manner that it borders on the device isolation region (9) and allows the device formation regions (51, 52, and 55) to be emerged therefrom. This structure enables a pn junction to be eliminated, realizing a semiconductor device capable of high-speed operation. Further, each device is formed in an N.sup.- type silicon layer (22) which is grown from the silicon substrate, and thereafter is insulated by forming the bottom recessed part (8). Accordingly, the semiconductor device has a uniform plane bearing.

REFERENCES:
patent: 3746587 (1993-07-01), Roswold
patent: 3777227 (1973-12-01), Krishna et al.
patent: 4505799 (1985-03-01), Baxter
patent: 4949138 (1990-08-01), Nishimura
patent: 4954927 (1990-09-01), Park
patent: 4990986 (1991-02-01), Murokami et al.
patent: 5122856 (1992-06-01), Komiya

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