Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2007-02-20
2007-02-20
Nuynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S492000, C257S493000, C257S338000, C257S155000, C257S495000, C438S138000, C438S213000
Reexamination Certificate
active
11144570
ABSTRACT:
A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) (100) including a semiconductor substrate (110) having a first conductivity type and buried semiconductor region (115) having a second conductivity type located above the semiconductor substrate. The IGBT further includes a plurality of first semiconductor regions (120) having the first conductivity type, a plurality of second semiconductor regions (130) having the first conductivity type, and a plurality of third semiconductor regions (140) having the second conductivity type. A sinker region (142) having the second conductivity type is disposed in a third semiconductor region and a first semiconductor region during manufacture to define the plurality of regions and tie the buried semiconductor region to the plurality of third semiconductor regions. An emitter (150) having the first conductivity type is disposed in one of the third semiconductor regions, a collector (170) having the first conductivity type is disposed in the other of the third semiconductor regions. A field poly plate (162) is provided and tied to the collector (170). In a particular embodiment, the plurality of third semiconductor regions and the buried semiconductor region deplete the plurality of first semiconductor regions in response to a reverse bias potential applied between the plurality of second semiconductor regions and the plurality of third semiconductor regions.
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Bose Amitava
Khemka Vishnu K.
Zhu Ronghua
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
Nguyen Tram H.
Nuynh Andy
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