Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Reexamination Certificate
2006-12-26
2006-12-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
C438S129000, C257SE29263, C257SE21598
Reexamination Certificate
active
07154133
ABSTRACT:
The semiconductor regions for source and drain of unused p-channel type MISFETQp and the power supply wiring2VDD are electrically connected and the semiconductor regions for source and drain of n-channel type MISFETQn and the power supply wiring2VSS are electrically connected. Moreover, the switch elements3SW1, 3SW2are formed of the p-channel type MISFETQp and n-channel type MISFETQn in the basic cells and these switch elements3SW1, 3SW2are discretely arranged in the n-well NWL and p-well PWL. Thereby, noise generated in the wells can be reduced in the semiconductor device where the switch elements are provided between the power supply wiring and wells and the threshold voltage of transistor formed in the well can be controlled through the ON/OFF controls of such switch elements.
REFERENCES:
patent: 5576637 (1996-11-01), Akaogi et al.
patent: 6-21443 (1994-01-01), None
patent: 6-334010 (1994-12-01), None
patent: 8-186180 (1996-07-01), None
Miles & Stockbridge P.C
Pert Evan
Renesas Technology Corp.
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