Semiconductor device and method of making the same

Fishing – trapping – and vermin destroying

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437 30, 437 56, 437154, 437958, H01L 21266

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active

051107503

ABSTRACT:
For compensating a decreased impurity concentration at a peripheral portion of a well region provided in a semiconductor substrate, an impurity whose conductivity type is same as that of the well region is diffused into the peripheral portion thereof to form a diffused region thereon. Therefore, the well region having the approximately uniform surface impurity concentration is provided.

REFERENCES:
patent: 3719535 (1973-03-01), Zoroglu
patent: 4728619 (1988-03-01), Pfiester
European Search Report, Kabushiki Kaisha Toshiba, Appln. No. 90115161.3, 3 pp., dated Jan. 1, 1991.

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