Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation
Reexamination Certificate
2007-07-03
2007-07-03
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With light activation
C257SE31039, C438S081000
Reexamination Certificate
active
10485843
ABSTRACT:
The present invention presents a semiconductor device (10) which is adapted to a solar cell, and in which a semiconductor element (1) is produced by forming one flat surface (2) on a spherical or substantially spherical silicon single crystal (1a,1b). A diffusion layer (3) and a substantially spherical pn junction (4) are formed on this semiconductor element (1), and a diffusion-mask thin film (5) and a positive electrode (6a) are formed on the flat surface (2). A negative electrode6bis formed at the apex on the opposite side to the positive electrode (6a), and an antireflection film (7) is formed on the surface side of the diffusion layer (3).
REFERENCES:
patent: 3038952 (1962-06-01), Ralph
patent: 3350775 (1967-11-01), Iles
patent: 3433676 (1969-03-01), Stein
patent: 3998659 (1976-12-01), Wakefield
patent: 4021323 (1977-05-01), Kilby et al.
patent: 4126812 (1978-11-01), Wakefield
patent: 4136436 (1979-01-01), Kilby et al.
patent: 4224081 (1980-09-01), Kawamura et al.
patent: 4581103 (1986-04-01), Levine et al.
patent: 4582588 (1986-04-01), Jensen et al.
patent: 4583588 (1986-04-01), Franzolini et al.
patent: 4691076 (1987-09-01), Levine et al.
patent: 5028546 (1991-07-01), Hotchkiss
patent: 5419782 (1995-05-01), Levine et al.
patent: 5428249 (1995-06-01), Sawayama et al.
patent: 5431127 (1995-07-01), Stevens
patent: 5469020 (1995-11-01), Herrick
patent: 5498576 (1996-03-01), Hotchkiss et al.
patent: 5538902 (1996-07-01), Izu et al.
patent: 5785768 (1998-07-01), Nakata
patent: 6204545 (2001-03-01), Nakata
patent: 6265242 (2001-07-01), Komori et al.
patent: 6294822 (2001-09-01), Nakata
patent: 6355873 (2002-03-01), Ishikawa
patent: 7109528 (2006-09-01), Nakata
patent: 2004/0238833 (2004-12-01), Nakata
patent: 2005/0067622 (2005-03-01), Nakata
patent: 2005/0127379 (2005-06-01), Nakata
patent: 2006/0043390 (2006-03-01), Nakata
patent: 2006/0086384 (2006-04-01), Nakata
patent: 2006/0133073 (2006-06-01), Nakata et al.
patent: 2006/0169992 (2006-08-01), Nakata
patent: 0 982 780 (2000-03-01), None
patent: 1 255 303 (2002-11-01), None
patent: 1195547 (1970-06-01), None
patent: 1-179374 (1989-07-01), None
patent: 5-36997 (1993-02-01), None
patent: 6-013633 (1994-01-01), None
patent: 8-199513 (1996-08-01), None
patent: 9-49213 (1997-02-01), None
patent: 09-162434 (1997-06-01), None
patent: 9-162434 (1997-06-01), None
patent: 10-33969 (1998-02-01), None
patent: 2000-22184 (2000-01-01), None
patent: 2000-259992 (2000-09-01), None
patent: 2001-102618 (2001-04-01), None
patent: 2001-119093 (2001-04-01), None
patent: 2001-156315 (2001-06-01), None
patent: 2001-168369 (2001-06-01), None
patent: 2001-177132 (2001-06-01), None
patent: 2001156315 (2001-06-01), None
patent: 2001-210834 (2001-08-01), None
patent: 2001-210848 (2001-08-01), None
patent: 2001-267609 (2001-09-01), None
patent: 2002-50780 (2002-02-01), None
patent: 2002-164554 (2002-06-01), None
patent: 98/15983 (1998-04-01), None
patent: WO 9815983 (1998-04-01), None
patent: WO-98/36461 (1998-08-01), None
patent: 99/10935 (1999-03-01), None
patent: WO 9910935 (1999-03-01), None
patent: WO- 02/35612 (2002-05-01), None
patent: WO- 02/35613 (2002-05-01), None
Dickey Thomas L.
Jordan and Hamburg LLP
LandOfFree
Semiconductor device and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of making the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3735654