Semiconductor device and method of making it

Details Semiconductor device and method of making it Semiconductor device and method of making it

1992-09-17

1993-12-28

Epps, Georgia Y.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 437129, H01S 308

Patent

active

052746607

ABSTRACT:
A semiconductor laser includes an active layer and a cladding layer disposed on the active layer and made of a semiconductor material having a larger energy band than the material of the active layer. A diffraction grating layer is disposed within the cladding layer close to the active layer. The diffraction grating layer has a multi-layer structure including a stack of sub-layers of a plurality of semiconductor materials which can be selectively etched. An optical resonator is formed by the active layer, the cladding layer, and first and second cladding layers sandwiching the active layer. The diffraction grating layer includes a portion in which the number of the sub-layers in different from the number of the sub-layers elsewhere whereby different coupling coefficients are present along the axial direction of the optical resonator.

REFERENCES:
patent: 4847857 (1989-07-01), Ohkura
patent: 4894835 (1990-01-01), Uomi et al.
patent: 5020072 (1991-05-01), Abe et al.
patent: 5023198 (1991-06-01), Strege
Morthier et al., "A new DFB-Laser Diode With Reduced Spatial Hole Burning", IEEE Photonics Technology Letters, vol. 2, No. 6, Jun. 1990, pp. 388-390.
Itaya et al., "New 1.5 .mu.m Wavelength GaInAsP/InP Distributed Feedback Laser", Electronics Letters, vol. 18, No. 23, Nov. 1982, pp. 1006-1008.

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