Semiconductor device and method of making it

Details Semiconductor device and method of making it Semiconductor device and method of making it

1993-10-04

1994-11-15

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257284, 257286, 257653, 257773, H01L 2978

Patent

active

053650786

ABSTRACT:
A semiconductor device includes a semiconductor substrate and channel and electron supply layers epitaxially grown on the semiconductor substrate. Source, drain, and gate electrodes are disposed on the electron supply layer. At least the gate electrode and the electron supply layer are structured such that an electron gas within the channel layer is one-dimensional to prevent scattering of electrons in the channel layer.

REFERENCES:
patent: 5198879 (1993-03-01), Ohshima
Sovero et al, "Noise Figure Characteristics of 1/2.mu.m Gate Single-Heterojunction High-Electron-Mobility FET's at 35 GHz", IEEE Electron Device Letters, vol. EDL-7, No. 3, Mar. 1986, pp. 179-181.

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