Semiconductor device and method of making

Details Semiconductor device and method of making Semiconductor device and method of making

1998-04-03

2000-11-21

Fahmy, Wael

Semiconductor device manufacturing: process

Making regenerative-type switching device

438140, 438340, 438372, 438374, H01L 21332, H01L 218222

Patent

active

061502006

ABSTRACT:
A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (34) formed in the epitaxial layer (14). A doped region (13) is formed in the semiconductor substrate (11) to reduce the drift resistance of the semiconductor device (10). The drain region (34) is formed from a plurality of doped regions (30-33) that can be formed with high energy implants.

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patent: 5430316 (1995-07-01), Contiero et al.
patent: 5485027 (1996-01-01), Williams et al.
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5777362 (1998-07-01), Pearce

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