Semiconductor device and method of generating sense signal

Details Semiconductor device and method of generating sense signal Semiconductor device and method of generating sense signal

2007-05-22

2007-05-22

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S203000, C365S207000, C365S210130

Reexamination Certificate

active

11194007

ABSTRACT:
A semiconductor device includes a first cascode circuit having a first current mirror amplifying a reference current flowing through a data line of a reference cell, and a second current mirror generating a first potential from an amplified reference current; and a second cascode circuit having a third current mirror amplifying a core current flowing through a data line of a core cell, and a transistor receiving a gate voltage corresponding to the amplified reference current and generating a second potential based on a difference between an amplified core cell current and the amplified reference current. Since the second potential is generated by the difference between the core cell current and the reference cell current, the second potential swings in the full range of the ground power supply voltage to the ground potential, and the range of the amplitude of the power supply voltage can be efficiently utilized. Sensing is enabled for a fine current margin.

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