Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

2011-04-05

2011-04-05

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S386000, C438S387000, C438S388000, C438S391000

Reexamination Certificate

active

07919385

ABSTRACT:
A semiconductor device includes a first insulating layer, a capacitor, an adhesive layer, and an intermediate layer. The first insulating layer may include a first insulating film. The first insulating layered structure has a first hole. The capacitor is disposed in the first hole. The capacitor may include bottom and top electrodes and a capacitive insulating film. The capacitive insulating film is sandwiched between the bottom and top electrodes. The adhesive layer contacts with the bottom electrode. The adhesive layer has adhesiveness to the bottom electrode. The intermediate layer is interposed between the adhesive layer and the first insulating film. The intermediate layer contacts with the adhesive layer and with the first insulating film. The intermediate layer has adhesiveness to the adhesive layer and to the first insulating film.

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