Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

2006-08-22

2006-08-22

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S213000

Reexamination Certificate

active

07095092

ABSTRACT:
In one embodiment, semiconductor device10comprises a diode which uses isolation regions (34, 16, and13) and a plurality of dopant concentrations (30, 20, 24, and26) which may be used to limit the parasitic current that is injected into the semiconductor substrate (12). Various biases on the isolation regions (34, 16, and13) may be used to affect the behavior of semiconductor device (10). In addition, a conductive layer (28) may be formed overlying the junction between anode (42) and cathode (40). This conductive layer (28) may decrease the electric field in selected regions in order to increase the maximum voltage that may be applied to cathode (40).

REFERENCES:
patent: 4345163 (1982-08-01), Davis et al.
patent: 5959332 (1999-09-01), Ravanelli et al.
patent: 6093620 (2000-07-01), Peltzer
patent: 6288424 (2001-09-01), Ludikhuize
patent: 6593629 (2003-07-01), Yamamoto
Zhu, R., “Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30V applications,” 1999 IEEE BCTM 11.1, pp. 184-186.

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