Semiconductor device and method of forming a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S548000, C257S728000, C257S735000

Reexamination Certificate

active

10400541

ABSTRACT:
A semiconductor device having an active region is formed in a layer provided on a semiconductor substrate. At least a portion of the semiconductor substrate below at least a portion of the active region is removed such that the portion of the active region is provided in a membrane defined by that portion of the layer below which the semiconductor substrate has been removed. A heat conducting and electrically insulating layer is applied to the bottom surface of the membrane. The heat conducting and electrically insulating layer has a thermal conductivity that is higher than the thermal conductivity of the membrane so that the heat conducting and electrically insulating layer allows heat to pass from the active region into the heat conducting and electrically insulating layer during normal operation of the device.

REFERENCES:
patent: 3689992 (1972-09-01), Schutze et al.
patent: 4571611 (1986-02-01), Kashiwagi
patent: 4870475 (1989-09-01), Endo et al.
patent: 4929986 (1990-05-01), Yoder
patent: 5109268 (1992-04-01), Butera
patent: 5272104 (1993-12-01), Schrantz et al.
patent: 5276338 (1994-01-01), Beyer et al.
patent: 5313094 (1994-05-01), Beyer et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5354717 (1994-10-01), Pollock et al.
patent: 5403729 (1995-04-01), Richards et al.
patent: 5420458 (1995-05-01), Shimoji
patent: 5444009 (1995-08-01), Richards et al.
patent: 5521420 (1996-05-01), Richards et al.
patent: 5573973 (1996-11-01), Sethi et al.
patent: 5633209 (1997-05-01), Leedy
patent: 5650639 (1997-07-01), Schrantz et al.
patent: 5656547 (1997-08-01), Richards et al.
patent: 5744865 (1998-04-01), Jeng et al.
patent: 5895972 (1999-04-01), Paniccia
patent: 5955781 (1999-09-01), Joshi et al.
patent: 6074890 (2000-06-01), Yao et al.
patent: 6111280 (2000-08-01), Gardner et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6222254 (2001-04-01), Liang et al.
patent: 6261865 (2001-07-01), Akram
patent: 6288426 (2001-09-01), Gauthier et al.
patent: 6316329 (2001-11-01), Hirota et al.
patent: 6410379 (2002-06-01), Wahlstrom
patent: 6566240 (2003-05-01), Udrea et al.
patent: 6624045 (2003-09-01), Liang et al.
patent: 6703684 (2004-03-01), Udrea et al.
patent: 6783589 (2004-08-01), Dahl et al.
patent: 6900518 (2005-05-01), Udrea et al.
patent: 6927102 (2005-08-01), Udrea et al.
patent: 2002/0034843 (2002-03-01), Udrea et al.
patent: 2002/0041003 (2002-04-01), Udrea et al.
patent: 2003/0183923 (2003-10-01), Udrea et al.
patent: 2004/0084752 (2004-05-01), Udrea et al.
patent: 2004/0087065 (2004-05-01), Udrea et al.
patent: 2005/0242368 (2005-11-01), Udrea et al.
patent: 2005/0242369 (2005-11-01), Udrea et al.
patent: 0 552 475 (1997-09-01), None
patent: 0 814 508 (1997-12-01), None
patent: 0 814 509 (1998-02-01), None
patent: WO 94/15359 (1994-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of forming a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of forming a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of forming a semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3829634

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.