Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1993-11-22
1995-08-29
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 9, 117 10, 437 21, 437 61, 437228, C30B 102
Patent
active
054451078
ABSTRACT:
A silicon-on insulator film (38) is formed by solid phase epitaxial re-growth. A layer of amorphous silicon (36) is formed such that it is only in direct contact with an underlying portion of a silicon substrate (12). The layer of amorphous silicon (36) is subsequently annealed to form a monocrystalline layer of epitaxial silicon (38). Because the amorphous silicon layer (36) is in contact with only the silicon substrate (12), during the re-growth process, the resulting epitaxial layer (38) is formed with a reduced number of crystal defects. The resulting epitaxial silicon layer (38) may then be used to form semiconductor devices.
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Kirsch Howard C.
Roth Scott S.
Breneman R. Bruce
Cooper Kent J.
Motorola Inc.
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