Fishing – trapping – and vermin destroying
Patent
1992-09-15
1994-01-18
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 52, 437235, 437919, 148DIG14, 148DIG163, H01L 2170
Patent
active
052799859
ABSTRACT:
The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.
REFERENCES:
patent: 4794563 (1988-12-01), Maeda
patent: 4977102 (1990-12-01), Ema
patent: 5006481 (1991-04-01), Chan et al.
patent: 5045494 (1991-09-01), Choi et al.
patent: 5079191 (1992-01-01), Shinriki et al.
patent: 5108941 (1992-04-01), Paterson et al.
Shinriki et al, "UV-O.sub.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's", IEEE Transactions on Electron Devices, vol. 38, pp. 455-462, No. 3, Mar. 1991.
Hearn Brian E.
NEC Corporation
Picardat Kevin M.
LandOfFree
Semiconductor device and method of fabrication thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabrication thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabrication thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1136107