Semiconductor device and method of fabrication

Details Semiconductor device and method of fabrication Semiconductor device and method of fabrication

2010-09-24

2011-12-06

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S687000, C257S777000, C257SE25006, C257SE25013

Reexamination Certificate

active

08072057

ABSTRACT:
A semiconductor device includes a first die pad, a first semiconductor chip provided on the first die pad, a second die pad, a second semiconductor chip provided on the second die pad, and a sealing resin made of a first resin material, sealing the first die pad, the first semiconductor chip, the second die pad and the second semiconductor chip. A lower surface of the first semiconductor chip is connected to the first die pad. A first portion of a lower surface of the second semiconductor chip is connected to the second die pad, and a second portion not connected to the second die pad of the lower surface of the second semiconductor chip is connected to an upper surface of the first semiconductor chip via a second resin material different from the first resin material.

REFERENCES:
patent: 5719436 (1998-02-01), Kuhn
patent: 6495908 (2002-12-01), Yang et al.
patent: 6590279 (2003-07-01), Huang et al.
patent: 7829995 (2010-11-01), Matsumura
patent: 2007/0158682 (2007-07-01), Terao
patent: 2008/0054433 (2008-03-01), Yoo et al.
patent: 2005-347428 (2005-12-01), None
patent: 2006-245215 (2006-09-01), None
patent: 2008-028006 (2008-02-01), None

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