Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2006-02-27
2008-11-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C438S456000
Reexamination Certificate
active
07449765
ABSTRACT:
A MEMS (micro electro-mechanical system) semiconductor device and a method for producing such a device. A preferred embodiment of the present invention comprises the a wafer having a continuous BCS (bondline control structure) surrounding a MEMS active area that is affixed to an interposer layer, which is in turn affixed to a cover to form a sealed cavity over the surface of the MEMS. To fabricate this device, a wafer is populated with MEMS devices. The BCS is formed in the same process step as a device structure, for example a spacer layer. The BCS remains, however, even if all or a portion of this spacer layer is removed. In this way when the reflecting surface of the MEMS device has been formed, an interposer layer may be mounted to the BCS using a filler-less adhesive, and a cover can likewise be affixed to the interposer layer.
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Ehmke John Charles
Hall James Norman
Brady III W. James
Pert Evan
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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