Semiconductor device and method of fabrication

Details Semiconductor device and method of fabrication Semiconductor device and method of fabrication

1995-08-07

1997-01-07

Kunemund, Robert

Fishing, trapping, and vermin destroying

437107, 437126, 437129, 437133, 117913, 117923, H01L 2120

Patent

active

055916660

ABSTRACT:
A method of fabricating semiconductor devices including defining an area on the surface of a substrate, selectively growing, on the area, a crystalline material with at least one defined crystallographic facet, and selectively growing a semiconductor device on the crystallographic facet. In a second embodiment, an area is defined on the surface of a substrate and chemical beam epitaxy is used to selectively grow, on the area, a layer of indium arsenide with at least one defined crystallographic facet.

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Kenji Hiruma et al., "Selective Growth of Ultra-Low Resistance GaAs/InGaAs for High Performance InGaAs FETs", Journal of Crystal Growth 124 (1992) pp. 255-259.
M.F. Zybura et al., "High Selectivity Patterned Substrate Epitaxy of In.sub.X Ga.sub.1-x As/GaAs(O<X<1) by Conventional LPOMVPE", J. Electrochem. Soc., vol. 139, No. 9, Sep. 1992, The Electrochemical Society, Inc., pp. L84-L86.

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