Semiconductor device and method of fabrication

Details Semiconductor device and method of fabrication Semiconductor device and method of fabrication

1986-04-18

1988-03-22

Edlow, Martin H.

357 59, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

047332905

ABSTRACT:
A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.

REFERENCES:
patent: 3462650 (1969-08-01), Hennings et al.
patent: 3559283 (1971-02-01), Kravitz
patent: 3566214 (1971-02-01), Usuda
patent: 3912556 (1975-10-01), Grenon et al.
patent: 4499656 (1985-01-01), Fabian et al.

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