Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-01-11

2011-01-11

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S499000, C257S506000, C438S400000, C438S424000, C438S430000

Reexamination Certificate

active

07868412

ABSTRACT:
A semiconductor device according to an embodiment of the invention includes: a semiconductor substrate; a well, having a well contact connection region, formed in the semiconductor substrate; a transistor formed on the well; an isolation region formed between the transistor formed on the well, and the well contact connection region; and a silicide layer formed between a bottom surface of the isolation region, and the semiconductor substrate.

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patent: 2003/0207527 (2003-11-01), Mehrad et al.
patent: 2004/0188678 (2004-09-01), Wieczorek et al.
patent: 2004/0232514 (2004-11-01), Arai et al.
patent: 05-251647 (1993-09-01), None
patent: 09-213786 (1997-08-01), None
patent: 2002-208642 (2002-07-01), None

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