Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-07-19

2011-07-19

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

C257SE27081, C365S185270

Reexamination Certificate

active

07982288

ABSTRACT:
A semiconductor device including a substrate, a high voltage device, a medium voltage device and a low voltage device is provided. The substrate includes a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. The high voltage device, the medium voltage device and the low voltage device are respectively disposed in the high voltage circuit area, the medium voltage circuit area and the low voltage circuit area. The medium voltage device and the high voltage device have the same structure while the medium voltage device and the low voltage device have different structures. Further, the high voltage device, the medium voltage device and the low voltage device respectively include a first gate dielectric layer, a second gate dielectric layer and a third gate dielectric layer, and the thickness of the second gate dielectric layer is smaller than that of the first gate dielectric layer.

REFERENCES:
patent: 6448126 (2002-09-01), Lai et al.
patent: 2007/0273001 (2007-11-01), Chen et al.
patent: WO 2006051487 (2006-05-01), None

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