Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-07-05

2011-07-05

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257SE21525, C257SE23179, C438S401000, C438S462000

Reexamination Certificate

active

07973419

ABSTRACT:
According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide.

REFERENCES:
patent: 5665645 (1997-09-01), Kinugawa
patent: 5783490 (1998-07-01), Tseng
patent: 5889335 (1999-03-01), Kuroi et al.
patent: 5935764 (1999-08-01), Kakehashi
patent: 6376924 (2002-04-01), Tomita et al.
patent: 6380049 (2002-04-01), Hamada et al.
patent: 6420791 (2002-07-01), Huang et al.
patent: 6737658 (2004-05-01), Nakasugi et al.
patent: 6756691 (2004-06-01), Tomita et al.
patent: 2001/0035547 (2001-11-01), Isogai
patent: 2004/0219727 (2004-11-01), Kawagoe et al.
patent: 2005/0167733 (2005-08-01), McGee et al.
patent: 4-211121 (1992-08-01), None
patent: 7-29854 (1995-01-01), None
patent: 8-316336 (1996-11-01), None
patent: 09-298169 (1997-11-01), None
patent: 2001-36036 (2001-02-01), None
patent: 2001-102278 (2001-04-01), None
patent: 2001-102440 (2001-04-01), None
patent: 2001-307999 (2001-11-01), None
patent: 2001-308181 (2001-11-01), None
patent: 2002-110500 (2002-04-01), None
patent: 2003-168687 (2003-06-01), None
patent: 2004-288798 (2004-10-01), None
patent: 2007-115797 (2007-05-01), None
Quirk et al., Semiconductor Manufacturing Technology, p. 214-215, Prentice-Hall, 2001.
Notice of Reasons for Rejection issued by the Japanse Patent Office on Nov. 16, 2010, for Japanese Patent Application No. 2005-308624 and an English language translation thereof.

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