Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-05-24

2011-05-24

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S536000, C257SE27016

Reexamination Certificate

active

07948053

ABSTRACT:
A semiconductor device includes a first insulating film, paired resistance elements each of which includes a first conductive film formed on the first insulating film, a second insulating film formed on the first conductive film and a second conductive film formed on the second insulating film, paired first contact plugs formed on one of the resistance elements and arranged along a first direction, and paired second contact plugs formed on the other resistance. One of the resistance elements has a first width in a second direction perpendicular to the first direction, and a semiconductor region surrounded by an element isolation region has a second width. The first width is smaller than half of the second width. The second insulating films are spaced from each other by a first distance. The second conductive films are spaced from each other by a second distance. The second distance is longer than the first distance.

REFERENCES:
patent: 6781193 (2004-08-01), Lee et al.
patent: 7358135 (2008-04-01), Park
patent: 2006/0033151 (2006-02-01), Shirota et al.
patent: 2007/0267685 (2007-11-01), Ishibashi
patent: 2006-294649 (2006-10-01), None

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