Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1996-03-27

1999-04-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438733, 257517, H01L 2100

Patent

active

058937595

ABSTRACT:
A depression having a depth not exceeding 0.1 .mu.m is formed on the surface of an epitaxial layer. An internal base region is formed just below the depression. An external base region is formed outside the depression. The depression having the above depth can suppress electric field at the end of the internal base in the neighborhood of the junction between the internal base region and the external base region.

REFERENCES:
patent: 4516145 (1985-05-01), Chang et al.
patent: 5077227 (1991-12-01), Kameyama et al.
patent: 5235206 (1993-08-01), Desilets et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-222274