Semiconductor device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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257 57, 257347, 257 72, 257350, H01L 2904, H01L 31036

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active

061371203

ABSTRACT:
In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

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Patent pending U.S. application No. 08/917,267 Semiconductor device and method of fabricating the same, filed Aug. 25, 1997.
Patent pending U.S. application No. 08/917,266 "Same as above title", filed Aug. 25, 1997.
Patent pending U.S. application No. 08/917,268 "Same as above title", filed Aug. 25, 1997.
Patent pending U.S. application No. 08/918,138 "Same as above title", filed Aug. 27, 1997.
Patent pending U.S. application No. 08/917,882 "Same as above title", field Aug. 27, 1997.

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