Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-12-30

2011-11-08

Cao, Phat (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S397000, C257SE29343

Reexamination Certificate

active

08053326

ABSTRACT:
A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.

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patent: 2007/0007656 (2007-01-01), Yoon
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patent: 2007/0181929 (2007-08-01), Juengling
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Chinese Office Action for Chinese application No. 200910007226.3, citing the attached references.
Korean Notice of Allowance for application No. 10-2008-0047082, citing the attached references.
Korean Office Action dated Feb. 23, 2010 for Korean Patent Application No. 10-2008-0047082, citing the attached references. .

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