Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-03-27
2010-11-02
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S048000, C438S065000, C257SE21514, C257SE21584, C257SE31117
Reexamination Certificate
active
07824950
ABSTRACT:
In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
REFERENCES:
patent: 4085411 (1978-04-01), Genesi
patent: 4454416 (1984-06-01), Gontowski, Jr. et al.
patent: 4485301 (1984-11-01), Gontowski, Jr. et al.
patent: 5481118 (1996-01-01), Tew
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5841180 (1998-11-01), Kobayashi et al.
patent: 5936231 (1999-08-01), Michiyama et al.
patent: 5955726 (1999-09-01), Takashima et al.
patent: 6002157 (1999-12-01), Kozuka
patent: 6087648 (2000-07-01), Zhang et al.
patent: 6194740 (2001-02-01), Zhang et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6204519 (2001-03-01), Yamazaki et al.
patent: 6236063 (2001-05-01), Yamazaki et al.
patent: 6243155 (2001-06-01), Zhang et al.
patent: 6287888 (2001-09-01), Sakakura et al.
patent: 6350981 (2002-02-01), Uno
patent: 6424326 (2002-07-01), Yamazaki et al.
patent: 6496240 (2002-12-01), Zhang et al.
patent: 6692984 (2004-02-01), Yonezawa et al.
patent: 6724012 (2004-04-01), Kimura
patent: 6734907 (2004-05-01), Hagihara et al.
patent: 6747638 (2004-06-01), Yamazaki et al.
patent: 6809718 (2004-10-01), Wei et al.
patent: 6814832 (2004-11-01), Utsunomiya
patent: 6822211 (2004-11-01), Hagihara
patent: 6858898 (2005-02-01), Hayakawa et al.
patent: 6867752 (2005-03-01), Yamazaki et al.
patent: 6891391 (2005-05-01), Hiroki
patent: 6930326 (2005-08-01), Kato et al.
patent: 6953599 (2005-10-01), Shiotsuka et al.
patent: 6982406 (2006-01-01), Chen
patent: 7030551 (2006-04-01), Yamazaki et al.
patent: 7046282 (2006-05-01), Zhang et al.
patent: 7056810 (2006-06-01), Yamazaki et al.
patent: 7067392 (2006-06-01), Yamazaki et al.
patent: 7145175 (2006-12-01), Kato et al.
patent: 7169636 (2007-01-01), Maruyama et al.
patent: 7180197 (2007-02-01), Nishi et al.
patent: 7253391 (2007-08-01), Koyama et al.
patent: 7279673 (2007-10-01), Kimura
patent: 2001/0030704 (2001-10-01), Kimura
patent: 2002/0011978 (2002-01-01), Yamazaki et al.
patent: 2002/0012057 (2002-01-01), Kimura
patent: 2002/0044208 (2002-04-01), Yamazaki et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0166336 (2003-09-01), Kato et al.
patent: 2003/0217805 (2003-11-01), Takayama et al.
patent: 2005/0056842 (2005-03-01), Nishi et al.
patent: 2005/0070038 (2005-03-01), Yamazaki et al.
patent: 2005/0250310 (2005-11-01), Ogawa
patent: 2006/0220211 (2006-10-01), Yamazaki et al.
patent: 2006/0270114 (2006-11-01), Nishi et al.
patent: 07-086607 (1995-03-01), None
patent: 08-064795 (1996-03-01), None
patent: 11-243209 (1999-09-01), None
patent: 2002-305297 (2002-10-01), None
patent: 2003-047017 (2003-02-01), None
patent: 2003-060744 (2003-02-01), None
patent: 2005-175436 (2005-06-01), None
“Amorphous Silicone Semiconductor Optical Sensors for Brightness Adjustment, Control of the Lighting Systems, etc., BCS Series,”, TDK Homepage, Jun. 1, 2002.
“Developing a Thin and High Output Visible Light Sensor Using a Plastic Substrate,”, TDK Homepage (Press Release), Oct. 1, 2003.
“A Visible Light Sensor and an Amplifier Circuit Succeeded in Forming Them Within the Size of 2×1.5 MM on a Plastic Chip,”, Denpa Shinbun, Oct. 2, 2003.
“Bring About High Output and Downsizing,”, The Nikkan Kogyo Shinbun, Oct. 2, 2003.
“Thin and High Output Visible Light Sensor,”, Kagaku Kougyou Shinbun, Oct. 2, 2003.
Monma Yohei
Nishi Kazuo
Sugawara Yuusuke
Takahashi Hidekazu
Yamada Daiki
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Long K
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