Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-05-30

2010-11-16

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S074000, C257S075000, C257S627000, C257SE29293

Reexamination Certificate

active

07834356

ABSTRACT:
To provide a thin film transistor having a high field effect mobility and a small variation in characteristics thereof, a second amorphous semiconductor layer patterned in a predetermined shape is formed on a first crystalline semiconductor layer17for constituting source and drain regions. By irradiating an irradiated region21of continuous wave laser beam while scanning along a channel length direction, the second amorphous semiconductor layer is crystallized to form a second crystalline semiconductor layer22. The first crystalline semiconductor layer17is crystallized by selectively adding nickel and therefore, an orientation rate of {111} is increased. By irradiating laser beam, crystals of the second amorphous semiconductor layer grow by constituting a seed by the first crystalline semiconductor layer17oriented to {111} and therefore, a region22afor constituting a channel forming region is also oriented highly to {111} and a direction of a crystal grain boundary becomes parallel with the channel length direction.

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