Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-11-21

2008-10-07

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S156000, C438S173000, C438S192000, C438S206000, C438S212000, C257S341000, C257S331000, C257SE21410, C257SE21269, C257SE21643

Reexamination Certificate

active

07432134

ABSTRACT:
A semiconductor device100includes an element-forming region having gate electrode108formed therein, and a circumferential region formed in the outer circumference of the element-forming region and having an element-isolating region118formed therein. On the main surface of the semiconductor substrate101, there is formed a parallel pn layer having an N-type drift region104and P-type column regions106alternately arranged therein. In the circumferential region, there is formed a field electrode120, but the field electrode120is not formed on the P-type column regions106. The P-type column regions106in the circumferential region are formed with a depth larger than or equal to that of the P-type column regions106in the element-forming region.

REFERENCES:
patent: 6724042 (2004-04-01), Onishi et al.
patent: 6768169 (2004-07-01), Tihanyi
patent: 2002/0074596 (2002-06-01), Suzuki et al.
patent: 2002/0195651 (2002-12-01), Miura et al.
patent: 2001-135819 (2001-05-01), None
patent: 2003-273355 (2003-09-01), None

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