Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-12-25

2007-12-25

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C117S106000

Reexamination Certificate

active

11175310

ABSTRACT:
A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

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Notification of Reasons for Refusal in the counterpart Japanese Application (JP-10-300996) and its partial English translation thereof dated Feb. 4, 2003.

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