Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-02-06
2007-02-06
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000, C257S083000, C257S257000, C257S290000, C257S351000, C257S368000
Reexamination Certificate
active
10692759
ABSTRACT:
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
REFERENCES:
patent: 4555746 (1985-11-01), Mochizuki et al.
patent: 4775225 (1988-10-01), Tsuboyama et al.
patent: 4874461 (1989-10-01), Sato et al.
patent: 4899137 (1990-02-01), Behrens et al.
patent: 5062198 (1991-11-01), Sun
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5337171 (1994-08-01), Mase et al.
patent: 5379139 (1995-01-01), Sato et al.
patent: 5499123 (1996-03-01), Mikoshiba
patent: 5499128 (1996-03-01), Hasegawa et al.
patent: 5518078 (1996-05-01), Tsujioka et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5619044 (1997-04-01), Makita et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5666173 (1997-09-01), Mase et al.
patent: 5680189 (1997-10-01), Shimizu et al.
patent: 5691793 (1997-11-01), Watanabe et al.
patent: 5696003 (1997-12-01), Makita et al.
patent: 5739882 (1998-04-01), Shimizu et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5777713 (1998-07-01), Kimura
patent: 5814835 (1998-09-01), Makita et al.
patent: 5815226 (1998-09-01), Yamazaki et al.
patent: 5815232 (1998-09-01), Miyazaki et al.
patent: 5821562 (1998-10-01), Makita et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5831710 (1998-11-01), Colgan et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5852485 (1998-12-01), Shimada et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5922125 (1999-07-01), Zhang
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5952554 (1999-09-01), Umeda
patent: 5952676 (1999-09-01), Sato et al.
patent: 5962871 (1999-10-01), Zhang et al.
patent: 5969784 (1999-10-01), Miyazaki et al.
patent: 5978061 (1999-11-01), Miyazaki et al.
patent: 5978063 (1999-11-01), Crawford et al.
patent: 5986729 (1999-11-01), Yamanaka et al.
patent: 6013929 (2000-01-01), Ohtani
patent: 6016181 (2000-01-01), Shimada
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 6104461 (2000-08-01), Zhang et al.
patent: 6118506 (2000-09-01), Yamazaki et al.
patent: 6151092 (2000-11-01), Fujimura et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6163357 (2000-12-01), Nakamura
patent: 6165824 (2000-12-01), Takano et al.
patent: 6225645 (2001-05-01), Zhang
patent: 6236445 (2001-05-01), Foschaar et al.
patent: 6238754 (2001-05-01), Shohara et al.
patent: 6275061 (2001-08-01), Tomita
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6285247 (2001-09-01), Shoji
patent: 6286359 (2001-09-01), Umeda
patent: 6288766 (2001-09-01), Mashiko et al.
patent: 6313481 (2001-11-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6356330 (2002-03-01), Ando et al.
patent: 6362865 (2002-03-01), Yoshida
patent: 6411360 (2002-06-01), Matsuyama et al.
patent: 6420988 (2002-07-01), Azami et al.
patent: 6445437 (2002-09-01), Miyazaki et al.
patent: 6555420 (2003-04-01), Yamazaki
patent: 6576926 (2003-06-01), Yamazaki et al.
patent: 6638781 (2003-10-01), Hirakata et al.
patent: 6680487 (2004-01-01), Kokubo et al.
patent: 6888608 (2005-05-01), Miyazaki et al.
patent: 6909115 (2005-06-01), Kokubo et al.
patent: 2001/0051398 (2001-12-01), Hirakata et al.
patent: 2002/0013019 (2002-01-01), Ohtani et al.
patent: 2002/0163457 (2002-11-01), Azami et al.
patent: 2003/0057419 (2003-03-01), Murakami et al.
patent: 2004/0084673 (2004-05-01), Hirakata et al.
patent: 0 604 006 (1994-06-01), None
patent: 0 978 877 (2000-02-01), None
patent: 0 984 492 (2000-03-01), None
patent: 1 006 664 (2000-06-01), None
patent: 1 041 622 (2000-10-01), None
patent: 61-184518 (1986-08-01), None
patent: 63-050817 (1988-03-01), None
patent: 5-281558 (1993-10-01), None
patent: 6-51319 (1994-02-01), None
patent: 6-59228 (1994-03-01), None
patent: 06-232059 (1994-08-01), None
patent: 6-244104 (1994-09-01), None
patent: 6-265912 (1994-09-01), None
patent: 7-130652 (1995-05-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-006053 (1996-01-01), None
patent: 08-008181 (1996-01-01), None
patent: 08-213317 (1996-08-01), None
patent: 8-248427 (1996-09-01), None
patent: 9-073088 (1997-03-01), None
patent: 9-073093 (1997-03-01), None
patent: 9-120062 (1997-05-01), None
patent: 09-162416 (1997-06-01), None
patent: 9-197413 (1997-07-01), None
patent: 10-068955 (1998-03-01), None
patent: 10-96955 (1998-04-01), None
patent: 10-153797 (1998-06-01), None
patent: 10-206893 (1998-08-01), None
patent: 10-228022 (1998-08-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-268316 (1998-10-01), None
patent: 10-268316 (1998-10-01), None
patent: 10-268361 (1998-10-01), None
patent: 10-319440 (1998-12-01), None
patent: 10-325959 (1998-12-01), None
patent: 10-339889 (1998-12-01), None
patent: 11-84386 (1999-03-01), None
patent: 11-95194 (1999-04-01), None
patent: 11-095261 (1999-04-01), None
patent: 11-097702 (1999-04-01), None
patent: 11-133463 (1999-05-01), None
Furue et al., “Characteristics and Driving Scheme of Polymer-Stablized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability”, SID 98 DIGEST, pp. 782-785.
Yoshida et al., “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time”, SID 97 DIGEST, pp. 841-844.
U.S. Appl. No. 09/570,223—Satoshi Murakami, “Capacitor, Semiconductor Device and Manufacturing Method Thereof”.
H. Ohtani et al., “LP-B: Late-News Poster: A 60-in. HDTV Rear-Projector with Continuous-Grain-Silicon Technology”, Society for Information Display International Symposium Digest of Technical Papers, vol. XXIX, May 1998, pp. 467-470.
European Search Report for Application No. 00110377.9-1528/; Dated: Oct. 15, 2004.
European Search Report for Application No. 00109971.2-2203-; Dated Aug. 17, 2000.
Ryuichi Shimokawa et al.; “Characteristics of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement”; Japanese Journal of Applied Physics, vol. 27, No. 5, May 1998, pp. 751-758.
Shiroh Inui, et al. “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays”; Journal of Materials Chemistry, vol. 6, No. 4, 1996, pp. 671-673.
Goto Yuugo
Hirakata Yoshiharu
Kobayashi Yuko
Yamazaki Shunpei
Louie Wai-Sing
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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